IS61NLP25636A Datasheet, PDF (13/37 Pages) Integrated Silicon Solution, Inc – 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM

IS61NLP25636A/IS61NVP25636A
IS61NLP51218A/IS61NVP51218A
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage Current
ILO
Output Leakage Current
Test Conditions
IOH = –4.0 mA (3.3V)
IOH = –1.0 mA (2.5V)
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
VSS ≤ VIN ≤ VDD⁽¹⁾
VSS ≤ VOUT ≤ VDDQ, OE = VIH
3.3V
Min.
Max.
2.4
—
—
0.4
2.0 VDD + 0.3
–0.3
0.8
–5
5
–5
5
ISSI ^®
2.5V
Min.
Max.
Unit
2.0
—
V
—
0.4
V
1.7 VDD + 0.3
V
–0.3
0.7
V
–5
5
µA
–5
5
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
Temp. range
-250
MAX
x18 x36
-200
MAX
x18 x36
Unit
ICC
AC Operating
Device Selected,
Com.
Supply Current
OE = VIH, ZZ ≤ VIL,
Ind.
All Inputs ≤ 0.2V or ≥ VDD – 0.2V,
Cycle Time ≥ tKC min.
280 280
300 300
270 270
mA
280 280
ISB
Standby Current Device Deselected,
TTL Input
VDD = Max.,
All Inputs ≤ VIL or ≥ VIH,
ZZ ≤ VIL, f = Max.
Com.
Ind.
100 100
100 100
100 100
mA
100 100
ISBI
Standby Current Device Deselected,
Com.
CMOS Input
VDD = Max.,
Ind.
VIN ≤ VSS + 0.2V or ≥VDD – 0.2V
f=0
70 70
80 80
70 70
mA
80 80
ISB2
Sleep Mode
ZZ>VIH
Com.
45 45
Ind.
50 50
45 45
mA
50 50
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100µA maximum leakage current when tied to ≤
VSS + 0.2V or ≥ VDD – 0.2V.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
13
Rev. B
06/27/06