IS62WV6416DALL Datasheet, PDF (12/15 Pages) Integrated Silicon Solution, Inc – High-speed access time: 35ns, 45ns, 55ns

IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
Vdr
Idr
Vdd for Data Retention
Data Retention Current
See Data Retention Waveform
Vdd = 1.2V, CS1 ≥ Vdd – 0.2V
Com.
Ind.
Auto.
tsdr
Data Retention Setup Time See Data Retention Waveform
trdr
Recovery Time
See Data Retention Waveform
Note: 1. Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
Min. typ.⁽¹⁾ Max. Unit
1.2
3.6 V
— 0.4 2 µA
4
18
0
— ns
trc
— ns
DATA RETENTION WAVEFORM (CS1 Controlled)
t_SDR
Data Retention Mode
t_RDR
V_DD
V_DR
CS1
GND
CS1 ≥ V_{DD -} 0.2V
DATA RETENTION WAVEFORM (CS2 Controlled)
V_DD
CS2
V_DR
GND
Data Retention Mode
t_SDR
CS2 ≤ 0.2V
t_RDR
12
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
09/29/09