IS62WV1288DALL Datasheet, PDF (11/16 Pages) Integrated Silicon Solution, Inc – 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV1288DALL/DBLL
IS65WV1288DALL/DBLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
Vdr
Vdd for Data Retention
See Data Retention Waveform
Idr
Data Retention Current
Vdd = 1.2V, CS1 ≥ Vdd – 0.2V
Com.
Ind.
Auto.
tsdr
Data Retention Setup Time See Data Retention Waveform
trdr
Recovery Time
See Data Retention Waveform
Note: 1. Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
Min. typ.⁽¹⁾ Max. Unit
1.2
3.6 V
— 0.5 2 µA
4
18
0
— ns
trc
— ns
DATA RETENTION WAVEFORM (CS1 Controlled)
t_SDR
Data Retention Mode
t_RDR
V_DD
V_DR
CS1
GND
CS1 ≥ V_{DD -} 0.2V
DATA RETENTION WAVEFORM (CS2 Controlled)
V_DD
CS2
V_DR
GND
Data Retention Mode
t_SDR
CS2 ≤ 0.2V
t_RDR
Integrated Silicon Solution, Inc. — www.issi.com
11
Rev.  B
12/01/2010