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IS61WV6416EEBLL Datasheet, PDF (11/15 Pages) Integrated Silicon Solution, Inc – 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |||
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IS61/64WV6416EEBLL
HIGH SPEED (IS61/64WV6416EEBLL)
DATA RETENTION SWITCHING CHARACTERISTICSâ (2.4V-3.6V)
1
Symbol Parameter
Test Condition
Options
Min.
Typ.(1) Max. Unit
Vdr
Idr
Vdd for Data Retention
See Data Retention Waveform
Data Retention Current
Vdd = Vdr(min), CE ⥠Vdd â 0.2V
Com.
Ind.
Auto.
2.0
â
3.6 V
â
â
0.5
5 mA
â
6
2
15
tsdr
Data Retention Setup Time See Data Retention Waveform
trdr
Recovery Time
See Data Retention Waveform
Note 1: Typical values are measured at Vdd = Vdr(min), Ta = 25oC and not 100% tested.
0
â
â ns
trc
â
â ns
3
DATA RETENTION WAVEFORM (CE Controlled)
4
5
tSDR
Data Retention Mode
tRDR
VDD
6
VDR
CE ⥠VDD - 0.2V
7
CE
GND
8
9
10
11
12
Integrated Silicon Solution, Inc. â www.issi.com
11
Rev. 00A
10/10/2012
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