IS61WV12816EDBLL Datasheet, PDF (11/14 Pages) Integrated Silicon Solution, Inc – 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

IS61/64WV12816EDBLL
HIGH SPEED (IS61/64WV12816EDBLL)
DATA RETENTION SWITCHING CHARACTERISTICS  (2.4V-3.6V)
1
Symbol Parameter
Test Condition
Options
Min.
Typ.⁽¹⁾ Max. Unit
Vdr
Vdd for Data Retention
See Data Retention Waveform
Idr
Data Retention Current
Vdd = 2.0V, CE ≥ Vdd – 0.2V
Com.
Ind.
Auto.
2.0
—
3.6 V
—
—
0.5
5 mA
—
6
2
15
tsdr
Data Retention Setup Time See Data Retention Waveform
trdr
Recovery Time
See Data Retention Waveform
Note 1: Typical values are measured at Vdd = Vdr(min), Ta = 25^oC and not 100% tested.
0
—
— ns
trc
—
— ns
3
DATA RETENTION WAVEFORM (CE Controlled)
4
5
tSDR
Data Retention Mode
tRDR
VDD
6
VDR
CE ≥ VDD - 0.2V
7
CE
GND
8
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com
11
Rev. A
09/29/2011