IS61WV102416ALL-20TLI Datasheet, PDF (10/20 Pages) Integrated Silicon Solution, Inc – 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
-20 ns
Symbol
Parameter Min. Max. Unit
trc
Read Cycle Time
20 —
ns
taa
Address Access Time
— 20
ns
toha
Output Hold Time
2.5 —
ns
tace
CE Access Time
— 20
ns
tdoe
OE Access Time
—
8
ns
thzoe⁽²⁾
OE to High-Z Output
0
8
ns
tlzoe⁽²⁾
OE to Low-Z Output
0
—
ns
thzce⁽²
CE to High-Z Output
0
8
ns
tlzce⁽²⁾
CE to Low-Z Output
3
—
ns
tba
LB, UB Access Time
—
8
ns
thzb
LB, UB to High-Z Output
0
8
ns
tlzb
LB, UB to Low-Z Output
0
—
ns
Notes:
1.  Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to
Vdd-0.3V and output loading specified in Figure 1a.
2.  Tested with the load in Figure 1b.Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3.  Not 100% tested.
10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.  F
05/09/12