IS62LV256L-15T Datasheet, PDF (1/7 Pages) Integrated Silicon Solution, Inc – 32K x 8 LOW VOLTAGE CMOS STATIC RAM

IS62LV256L
32K x 8 LOW VOLTAGE
CMOS STATIC RAM
ISSI ^®
APRIL 1999
FEATURES
• High-speed access time: 15, 20, 25 ns
• Automatic power-down when chip is deselected
• CMOS low power operation
— 255 mW (max.) operating
— 0.18 mW (max.) CMOS standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three-state outputs
DESCRIPTION
The ISSI IS62LV256L is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using ISSI's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 15 ns maximum.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
50 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (CE). The active LOW Write Enable (WE) controls
both writing and reading of the memory.
The IS62LV256L is available in the JEDEC standard 28-pin
SOJ and the 450-mil TSOP package.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
VCC
GND
I/O0-I/O7
DECODER
I/O
DATA
CIRCUIT
256 X 1024
MEMORY ARRAY
COLUMN I/O
CE
CONTROL
OE
CIRCUIT
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
1
SR033-1A
04/27/99