IS61LV3216 Datasheet, PDF (1/8 Pages) Integrated Silicon Solution, Inc – 32K x 16 LOW VOLTAGE CMOS STATIC RAM

IS61LV3216
32K x 16 LOW VOLTAGE CMOS STATIC RAM
ISSI^®
NOVEMBER 1997
FEATURES
• High-speed access time: 10, 12, 15, and 20 ns
• CMOS low power operation
— 150 mW (typical) operating
— 150 µW (typical) standby
• TTL compatible interface levels
• Single 3.3V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Available in 44-pin 400-mil SOJ package and
44-pin TSOP (Type 2)
DESCRIPTION
The ISSI IS61LV3216 is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design tech-
niques, yields fast access times with low power consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.A
data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61LV3216 is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type 2).
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE
OE
CONTROL
WE
CIRCUIT
UB
LB
COLUMN I/O
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. A
04/17/01