IS61LV2568 Datasheet, PDF (1/8 Pages) Integrated Silicon Solution, Inc – 256K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV2568
256K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI ^®
DECEMBER 2000
FEATURES
• High-speed access times:
8, 10, 12 and 15 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
• CE power-down
• Low power: 540 mW @ 10 ns
36 mW standby mode
• TTL compatible inputs and outputs
• Single 3.3V ±10% power supply
• Packages available:
– 36-pin 400-mil SOJ
– 44-pin TSOP (Type II)
DESCRIPTION
The ISSI IS61LV2568 is a very high-speed, low power,
262,144-word by 8-bit CMOS static RAM. The IS61LV2568
is fabricated using ISSI's high-performance CMOS tech-
nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 36mW (max.) with CMOS input levels.
The IS61LV2568 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV2568 is available in 36-pin 400-mil SOJ, and
44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
VCC
GND
I/O0-I/O7
DECODER
256K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
CONTROL
OE
CIRCUIT
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. A
12/19/00