TIL119 Datasheet, PDF (3/3 Pages) Texas Instruments – Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor

Collector Power Dissipation vs. Ambient Temperature
200
10000
4000
150
1000
400
100
100
40
20
50
10
Current Transfer Ratio vs.
Forward Current
V = 1V
CE
T_A = 25°C
0
-30
0 25 50 75 100 125
Ambient temperature T_A ( °C )
Forward Current vs. Ambient Temperature
80
70
60
50
40
30
20
10
0
-30
0 25 50 75 100 125
Ambient temperature T_A ( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
1.2
I = 10mA
F
1.0
I_C = 30mA
0.8
0.6
0.4
0.2
0
-30
0
25
50 75 100
Ambient temperature T ( °C )
A
7/12/00
0
0.1 0.2 0.5 1 2 5 10 20 50 100
Forward current I_F (mA)
Collector Current vs. Collector-emitter Voltage
100 ^5mA
T_A = 25°C
80
2mA
60
40
20
0
0
1
2
I = 1mA
F
3
4
5
Collector-emitter voltage V_CE ( V )
Normalized Current Transfer
Ratio vs. Ambient Temperature
1.5
I = 10mA
F
V_CE = 1V
1.0
0.5
0
-30
0
25
50 75 100
Ambient temperature T ( °C )
A
DB92287-AAS/A2