TIL119 Datasheet, PDF (2/3 Pages) Texas Instruments – Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor

ELECTRICAL CHARACTERISTICS ( T_A = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
Input
Output
Forward Voltage (V )
F
Reverse Voltage (V_R)
3
Reverse Current (I_R)
Collector-emitter Breakdown (BV ) 30
CEO
Emitter-collector Breakdown (BV_ECO) 5
Collector-emitter Dark Current (I )
CEO
1.2 1.5 V
V
10 µA
V
V
100 nΑ
TEST CONDITION
I = 10mA
F
I_R = 10µA
V_R = 3V
I = 1mA (note 2)
C
I_E = 100µA
V = 10V
CE
Coupled Output Collector Current ( I_C )(Note 2) 30
Collector-emitter Saturation VoltageV_CE(SAT)
Input to Output Isolation Voltage V 5300
ISO
7500
Input-output Isolation Resistance R 1011
ISO
mA
1.0 V
V
RMS
V_PK
Ω
10mA I_F , 1V V_CE
10mA I_F , 30mA I_C
(note 1)
(note 1)
V = 500V (note 1)
IO
Output Rise Time
tr
Output Fall Time
tf
300
µs
300
µs
V_CC=10V,I_{C (on)}=2.5mA,
R_L = 100Ω , fig.1
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
Input
FIGURE 1
V_CC = 10V
100Ω
Input
t_on
t_r
Output ^Output
10%
90%
t_off
t_f
10%
90%
7/12/00
DB92287-AAS/A2