2SC4260 Datasheet, PDF (5/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
S-PARAMETERS (Emitter Common)
VCE = 5 V, IC = 5 mA, ZO = 50Ω
Freque.
S₁₁
S₂₁
MHz
MAG.
ANG.
MAG.
ANG.
100
0.744
–48.4
13.142
145.9
200
0.599
–85.5
9.669
123.5
300
0.506
–110.7
7.201
109.5
400
0.457
–128.9
5.696
100.6
500
0.440
–143.5
4.687
93.9
600
0.430
–155.1
3.977
88.1
700
0.437
–163.2
3.453
83.5
800
0.441
–170.9
3.070
79.1
900
0.452
–177.1
2.746
75.4
1000
0.462
177.5
2.508
71.9
isc RF Product Specification
2SC4260
S₁₂
MAG.
ANG.
0.034
67.5
0.053
55.9
0.064
52.6
0.072
52.7
0.079
54.3
0.087
57.1
0.095
59.4
0.104
61.3
0.113
63.6
0.122
65.6
S₂₂
MAG.
ANG.
0.876
–19.1
0.702
–28.2
0.586
–30.9
0.520
–31.2
0.480
–31.2
0.452
–31.5
0.432
–31.7
0.417
–32.4
0.402
–33.4
0.390
–34.5
VCE = 5 V, IC = 10 mA, ZO = 50Ω
Freque.
S₁₁
MHz
MAG.
ANG.
100
0.585
–69.3
200
0.460
–110.1
300
0.408
–133.9
400
0.390
–149.7
500
0.390
–160.7
600
0.391
–169.8
700
0.404
–176.7
800
0.411
178.0
900
0.426
173.1
1000
0.436
169.8
S₂₁
MAG.
ANG.
19.233
134.4
12.238
112.6
8.571
101.3
6.608
94.5
5.348
88.7
4.503
84.4
3.884
80.3
3.446
76.8
3.069
73.4
2.803
70.7
isc Website：www.iscsemi.cn
S₁₂
MAG.
ANG.
0.028
63.8
0.041
58.1
0.052
60.0
0.062
62.9
0.073
65.3
0.084
67.7
0.095
69.1
0.107
70.3
0.119
71.5
0.131
72.2
S₂₂
MAG.
ANG.
0.768
–25.6
0.564
–31.4
0.468
–30.5
0.420
–29.1
0.394
–28.1
0.375
–27.8
0.361
–27.7
0.350
–28.2
0.339
–29.0
0.330
–29.7