2SC4260 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4260
DESCRIPTION
·Low Noise
·High Gain
APPLICATIONS
·Designed for use in UHF frequency converter , wide band
amplifier.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
25
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
13
V
3.0
V
50
mA
0.1
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn