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| V Datasheet, PDF (2/2 Pages) Continental Device India Limited – SOT-23 Formed SMD Package | |||
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD928
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
80
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 80V ; IE= 0
1.0 V
1.0 V
100 μ A
IEBO
Emitter Cutoff Current
VEB= 8V ; IC= 0
100 μ A
hFE
DC Current Gain
IC= 0.5A ; VCE= 5V
60
300
fT
Current-GainâBandwidth Product
IC= 0.5A; VCE= 5V;ftest= 1.0MHz
3.0
MHz
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