V Datasheet, PDF (1/2 Pages) Continental Device India Limited – SOT-23 Formed SMD Package

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD928
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 80V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat)= 1.0V(Max) @I_C= 3.0A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in audio frequency power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
80
V
80
V
7
V
4
A
6
A
0.5
A
30
W
150
℃
-55~150
℃
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