 English |
|
|
|
|
|
|
|
| TIP36F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
TIP36F
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A; IB= -3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -25A; IB= -6.25A
VBE(on)-1 Base-Emitter On Voltage
IC= -15A ; VCE= -4V
VBE(on)-2 Base-Emitter On Voltage
IC= -25A ; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -90V; IB=B 0
ICES
Collector Cutoff Current
VCE= -200V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1.5A ; VCE= -4V
hFE-2
DC Current Gain
IC= -15A ; VCE= -4V
fT
Current-GainâBandwidth Product IC= -1A ; VCE= -10V; ftest= 1.0MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -15A; IB1= -IB2= -1.5A;
VBE(off)= -4.15V; RL= 2Ω
MIN
-160
25
8
3
MAX UNIT
V
-2.5
V
-5.0
V
-2.0
V
-4.0
V
-1.0
mA
-0.7
mA
-1.0
mA
MHz
1.2
μs
0.9
μs
isc Websiteï¼www.iscsemi.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese