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| TIP36F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
TIP36F
DESCRIPTION
·DC Current Gain-
: hFE= 25(Min)@IC = -1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -160V(Min)
·Complement to Type TIP35F
·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= -1.0A
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-160
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-25
A
ICM
Collector Current-peak
-40
A
IBB
Base Current
-5
A
PC
Collector Power Dissipation@ TC=25â
125
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
â/W
isc Websiteï¼www.iscsemi.cn
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