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| TIP36 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
TIP36/36A/36B/36C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP36
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP36A
TIP36B
IC=-30mA ;IB=0
TIP36C
VCEsat-1 Collector-emitter saturation voltage IC=-15A ;IB=-1.5A
VCEsat-2 Collector-emitter saturation voltage IC=-25A; IB=-5A
VBE-1
Base-emitter on voltage
IC=-15A ; VCE=-4V
VBE-2
Base-emitter on voltage
IC=-25A ; VCE=-4V
ICEO
Collector
cut-off current
ICES
Collector
cut-off current
TIP36/36A VCE=-30V; IB=0
TIP36B/36C VCE=-60V; IB=0
TIP36
VCE=-40V;VEB=0
TIP36A
VCE=-60V;VEB=0
TIP36B
VCE=-80V;VEB=0
TIP36C
VCE=-100V;VEB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
IC=-1.5A ; VCE=-4V
IC=-15A ; VCE=-4V
IC=-1A ; VCE=-10V
MIN TYP. MAX UNIT
-40
-60
V
-80
-100
-1.8
V
-4.0
V
-2.0
V
-4.0
V
-1.0
mA
-0.7
mA
-1.0
mA
25
15
75
3
MHz
2
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