TIP36 Datasheet, PDF (1/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
TIP36/36A/36B/36C
DESCRIPTION
With TO-3PN package
Complement to type TIP35/35A/35B/35C
DC current gain h _FE=25(Min)@I_C=-1.5A
APPLICATIONS
Designed for use in general purpose
power amplifier and switching applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
TIP36
V_CBO
Collector-base voltage
TIP36A
TIP36B
Open emitter
TIP36C
TIP36
V_CEO
TIP36A
Collector-emitter voltage
TIP36B
Open base
TIP36C
V_EBO
I_C
Emitter-base voltage
Collector current
Open collector
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-25
-40
-5
125
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.0
UNIT
/W