TIP35F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
TIP35F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 6.25A
VBE(on)-1 Base-Emitter On Voltage
IC= 15A ; VCE= 4V
VBE(on)-2 Base-Emitter On Voltage
IC= 25A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 90V; IB= 0
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 15A ; VCE= 4V
fT
Current-Gain—Bandwidth Product I_C= 1A ; V_CE= 10V; f_test= 1.0MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 15A; IB1= -IB2= 1.5A;
VBE(off)= 4.15V; RL= 2Ω
MIN
MAX UNIT
160
V
2.5
V
5.0
V
2.0
V
4.0
V
1.0
mA
0.7
mA
1.0
mA
25
8
3
MHz
1.2
μs
0.9
μs
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