TIP35F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
TIP35F
DESCRIPTION
·DC Current Gain-
: hFE= 25(Min)@IC = 1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 160V(Min)
·Complement to Type TIP36F
·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= 1.0A
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
25
A
ICM
Collector Current-peak
40
A
IB
Base Current
5
A
PC
Collector Power Dissipation@ TC=25℃
125
W
Tj
Junction Temperature
Tstg
Storage Temperature
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
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