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| TIP35D Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,120-160V,125W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
TIP35D
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 6.25A
VBE(on)-1 Base-Emitter On Voltage
IC= 15A; VCE= 4V
VBE(on)-2 Base-Emitter On Voltage
IC= 25A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 90V; IB=B 0
ICES
Collector Cutoff Current
VCE= 160V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.5A; VCE= 4V
hFE-2
DC Current Gain
IC= 15A; VCE= 4V
fT
Current-GainâBandwidth Product IC= 1A; VCE= 10V; ftest= 1.0MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 15A; IB1= -IB2= 1.5A;
VBE(off)= 4.15V; RL= 2Ω
MIN MAX UNIT
120
V
2.5
V
5.0
V
2.0
V
4.0
V
1.0
mA
0.7
mA
1.0
mA
25
8
3
MHz
1.2
μs
0.9
μs
isc Websiteï¼www.iscsemi.cn
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