 English |
|
|
|
|
|
|
|
| TIP35D Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,120-160V,125W) | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
TIP35D
DESCRIPTION
·DC Current Gain-
: hFE= 25(Min)@IC = 1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
·Complement to Type TIP36D
·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= 1.0A
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
25
A
ICM
Collector Current-peak
40
A
IBB
Base Current
5
A
PC
Collector Power Dissipation@ TC=25â
125
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
â/W
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese