TIP35CF Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
TIP35CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
*VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
*VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
*VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A
*VBE(on)-1 Base-Emitter On Voltage
IC= 15A ; VCE= 4V
*VBE(on)-2 Base-Emitter On Voltage
IC= 25A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
*hFE-1 DC Current Gain
IC= 1.5A ; VCE= 4V
*hFE-2 DC Current Gain
IC= 15A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
*Pulse test: Pulse width 300µs, Duty cycle <2%
IC= 1A ; VCE= 10V;ftest= 1.0MHz
MIN
MAX UNIT
100
V
1.8
V
4.0
V
2.0
V
4.0
V
1.0
mA
0.7
mA
1.0
mA
25
15
75
3
MHz
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