TIP35CF Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
TIP35CF
DESCRIPTION
·DC Current Gain-
: hFE= 25(Min)@IC = 1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·Complement to Type TIP36CF
·Current Gain-Bandwidth Product-
: fT= 3.0MHz(Min)@IC= 1.0A
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
25
A
ICM
Collector Current-peak
40
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature
5
A
125
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W
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