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| TIP32F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
TIP32F
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.75A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICES
Collector Cutoff Current
VCE= -200V; VEB= 0
ICEO
Collector Cutoff Current
VCE= -90V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -3A; VCE= -4V
fT
Current-GainâBandwidth Product
IC= -0.5A; VCE= -10V
MIN MAX UNIT
-160
V
-2.5
V
-1.8
V
-0.2 mA
-0.3 mA
-1.0 mA
25
5
3
MHz
isc Websiteï¼www.iscsemi.cn
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