TIP32F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
TIP32F
DESCRIPTION
·DC Current Gain -h_FE = 25(Min)@ I_C= -1A
·Collector-Emitter Breakdown Voltage-
: V_{(BR) CEO}= -160V(Min)
·Complement to Type TIP31F
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-200
V
V_CEO Collector-Emitter Voltage
-160
V
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-3
A
I_CM
Collector Current-Pulse
-5
A
I_BB
Base Current
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Ttemperature Range
-1
A
40
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
3.125 ℃/W
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