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| TIP31D Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,120-160V,40W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP31D
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.75A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICES
Collector Cutoff Current
VCE= 160V; VEB= 0
ICEO
Collector Cutoff Current
VCE= 90V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
fT
Current-GainâBandwidth Product
IC= 0.5A ; VCE= 10V
MIN MAX UNIT
120
V
2.5
V
1.8
V
0.2
mA
0.3
mA
1.0
mA
25
5
3
MHz
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