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| TIP31D Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,120-160V,40W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP31D
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= 1A
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 120V(Min)
·Complement to Type TIP32D
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
5
A
IBB
Base Current
PC
Collector Power Dissipation
TC=25â
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
1
A
40
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.125 â/W
isc Websiteï¼www.iscsemi.cn
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