TIP3055T Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP3055T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 4V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 30V; IB=0
VCB= 70V; IE=0;
VCB= 70V; IE=0; Tj= 150℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A; VCE= 4V
hFE-2
DC Current Gain
IC= 10A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
Switching Times
ton
Turn-On Time
tf
Turn-Off Time
IC= 2A; IB1= -IB2= 0.2A
MIN MAX UNIT
60
V
0.8
V
4.0
V
1.8
V
1.8
V
0.2
mA
0.1
1.0
mA
0.5
mA
20
70
5
2
MHz
1.0
μs
4.0
μs
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