|
TIP3055T Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
TIP3055T
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC = 4A
·Complement to Type TIP2955T
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-base Voltage
5
V
IC
Collector Current-Continuous
10
A
IC
Collector Current-Peak
12
A
IB
Base Current
4
A
PC
Collector Power Dissipation@TC=25â
75
W
Tj
Junction Tmperature
Tstg
Storage Temperature Range
150
â
-65~175 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 â/W
Rth j-a Thermal Resistance,Junction to Ambient 70
â/W
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
|
▷ |