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| TIP29 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP29
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 4V
ICES
Collector Cutoff Current
VCE= 40V; VEB= 0
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A; VCE= 4V
hFE-2
DC Current Gain
IC= 1A; VCE= 4V
fT
Current-GainâBandwidth Product IC= 0.2A ; VCE= 10V; f= 1MHz
MIN MAX UNIT
40
V
0.7
V
1.3
V
0.2
mA
0.3
mA
1.0
mA
40
15
75
3
MHz
isc Websiteï¼www.iscsemi.cn
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