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| TIP29 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP29
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat) = 0.7V(Max.)@IC= 1.0A
·Complement to Type TIP30
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Pulse
IB
Base Current
PC
Collector Power Dissipation
TC=25â
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
40
V
40
V
5
V
1
A
3
A
0.4
A
30
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
4.17 â/W
62.5 â/W
isc Websiteï¼www.iscsemi.cn
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