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| TIP147T Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon PNP Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
TIP147T
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -10A ,IB= -40mA
V BE(on) Base-Emitter On Voltage
IC= -10A ; VCE= -4V
ICBO
Collector Cutoff current
VCB= -100V, IE= 0
ICEO
Collector Cutoff current
VCE= -50V, IB= 0
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
Switching Times
VEB= -5V; IC= 0
IC= -5A ; VCE= -4V
IC= -10A ; VCE= -4V
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
VCC= -30 V, IC= - 5.0 A,
IB1= -IB2 = -20 mA;
tp= 20μs
Duty Cycleâ¤20%
MIN TYP. MAX UNIT
-100
V
-2.0
V
-3.0
V
-3.5
V
-3.0
V
-1
mA
-2
mA
-2
mA
1000
500
0.15
μs
0.55
μs
2.5
μs
2.5
μs
isc websiteï¼www.iscsemi.cn
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