TIP147T Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
TIP147T
DESCRIPTION
·High DC Current Gain-
: h_FE = 1000(Min)@ I_C= -5A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -100V(Min)
·Complement to Type TIP142T
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
-100
V
V_CEO Collector-Emitter Voltage
-100
V
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-10
A
I_CM
Collector Current-Peak
-15
A
I_B
Base Current- Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-0.5
A
80
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.56 ℃/W
isc website：www.iscsemi.cn
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