TIP140T Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60-100V,80W)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP140T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA
3.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A ,IB= 40mA
3.5
V
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 4V
3.0
V
ICBO
Collector Cutoff current
VCB= 60V, IE= 0
1
mA
ICEO
Collector Cutoff current
VCE= 30V, IB= 0
2
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2
mA
hFE-1
DC Current Gain
IC= 5A; VCE= 4V
1000
hFE-2
DC Current Gain
IC= 10A; VCE= 4V
500
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
0.15
μs
VCC = 30 V, IC = 5.0 A,
0.55
μs
IB1= -IB2= 20 mA; tp= 20μs
Duty Cycle≤20%
2.5
μs
2.5
μs
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