|
TIP140T Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60-100V,80W) | |||
|
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP140T
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
·Complement to Type TIP145T
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
0.5
A
80
W
150
â
Tstg
Storage Temperature Range
-55~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.56 â/W
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
|
▷ |