TIP140F Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – Monolithic Construction With Built In Base- Emitter Shunt Resistors

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP140F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A ,IB= 40mA
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 4V
ICBO
Collector Cutoff current
VCB= 60V, IE= 0
ICEO
Collector Cutoff current
VCE= 30V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
VCC = 30 V, IC = 5.0 A,
IB1 =- IB2 =20mA,
RL= 6Ω
tf
Fall Time
MIN TYP. MAX UNIT
60
V
2.0
V
3.0
V
3.5
V
3.0
V
1
mA
2
mA
2
mA
1000
500
0.15
μs
0.55
μs
2.5
μs
2.5
μs
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