TIP140F Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Monolithic Construction With Built In Base- Emitter Shunt Resistors

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP140F
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
·Complement to Type TIP145F
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
60
W
150
℃
-65~150
℃
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