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| TIP135 Datasheet, PDF (2/2 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
TIP135
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB=B -16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A, IB=B -30mA
VBE(on) Base-Emitter On Voltage
IC= -4A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -60V, IE= 0
ICEO
Collector Cutoff Current
VCE= -30V, IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -4A; VCE= -4V
MIN
MAX UNIT
-60
V
-2.0
V
-3.0
V
-2.5
V
-0.2
mA
-0.5
mA
-5
mA
500
1000 15000
isc Websiteï¼www.iscsemi.cn
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