 English |
|
|
|
|
|
|
|
| TIP135 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
TIP135
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -4A
·Complement to Type TIP130
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IBB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25â
Collector Power Dissipation
@Ta=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.3
A
70
W
2
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.785 â/W
Thermal Resistance,Junction to Ambient 63.5 â/W
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese