TIP122FP Datasheet, PDF (2/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP122FP
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation voltage IC= 5A ,IB= 20mA
VBE(on)
Base-Emitter On Voltage
IC= 3.0A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
ICEO
Collector Cutoff Current
VCE= 50V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 3V
hFE-2
DC Current Gain
IC= 3.0A ; VCE= 3V
MIN TYP. MAX UNIT
100
V
2.0
V
4.0
V
2.5
V
0.2 mA
0.5 mA
2
mA
1000
1000
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