TIP122FP Datasheet, PDF (1/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 3A
= 4.0V(Max)@ IC= 5A
·Complement to Type TIP127FP
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
100
mA
29
W
2
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
4.3 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Product Specification
TIP122FP
isc website：www.iscsemi.com
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