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| TIP102 Datasheet, PDF (2/3 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP102
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ,IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ,IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 8A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
ICEO
Collector Cutoff Current
VCE= 50V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A ; VCE= 4V
hFE-2
DC Current Gain
IC= 8A ; VCE= 4V
COB
Output Capacitance
IE= 0 ; VCB= 10V,f= 0.1MHz
MIN
MAX UNIT
100
V
2.0
V
2.5
V
2.8
V
50
μA
50
μA
2
mA
1000 20000
200
200
pF
isc Websiteï¼www.iscsemi.cn
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