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| TIP102 Datasheet, PDF (1/3 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP102
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 3A
= 2.5V(Max)@ IC= 8A
·Complement to Type TIP107
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
15
A
IBB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25â
Collector Power Dissipation
@Ta=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
1
A
80
W
2
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.56 â/W
Thermal Resistance,Junction to Ambient 62.5 â/W
isc Websiteï¼www.iscsemi.cn
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