STD888 Datasheet, PDF (2/2 Pages) STMicroelectronics – HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
STD888
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE=-0.1mA,IC=0
V (BR)CEO) * Collector-Emitter Breakdown Voltage IC=-10mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage
VCE(sat) * Collector-Emitter Saturation Voltage
VBE(sat)* Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC=-0.1mA ,IE=0
IC= -0.5A; IB= -5mA
IC= -2A; IB= -50mA
IC= -5A; IB= -0.25A
IC= -6A; IB= -0.25A
IC= -8A; IB= -0.4A
IC= -10A; IB= -0.5A
IC= -2A; IB= -50mA
IC= -6A; IB= -0.25A
VCB= -30V; IE= 0
IEBO
Emitter Cutoff Current
hFE*
DC Current Gain
* Pulse Test: PW≤300μs, Duty Cycle≤1.5%
VEB= -6V; IC=0
IC= -10mA; VCE= -1V
IC= -0.5A; VCE= -1V
IC= -5A; VCE= -1V
Switching Times; Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= -3A; VCC= 20V;
IB1= IB2= -60mA
MIN
TYP
MAX
UNI
T
-6
V
-30
V
-60
V
-0.15 V
-0.25 V
-0.7
V
-0.7
V
-1.0
V
-1.5
V
-1.1
V
-1.4
V
-10
nA
-10
nA
150
150
300
75
220
ns
210
ns
300
ns
100
ns
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