STD888 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
STD888
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.7V(Max)( IC= -5A; IB= -0.25A)
·DC Current Gain -hFE = 150(Min)@ IC= -0.5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Voltage regulation in bias supply circuits applications
·Switching regulator inbattery charger applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
PC
Total Power Dissipation
@ TC=25℃
-10
A
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
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