STD2805 Datasheet, PDF (2/3 Pages) STMicroelectronics – Low voltage fast-switching PNP power transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
STD2805
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE=-0.1mA,IC=0
V (BR)CEO) Collector-Emitter Breakdown Voltage IC=-1mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage
VCE(sat) * Collector-Emitter Saturation Voltage
VBE(sat)*
ICBO
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC=-0.1mA ,IE=0
IC= -100mA; IB= -5mA
IC= -2A; IB= -50mA
IC= -3A; IB= -0.15A
IC= -5A; IB= -0.2A
IC= -2A; IB= -50mA
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE*
DC Current Gain
IC= -100mA; VCE= -2V
IC= -5A; VCE= -2V
IC= -10A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -50mA ;VCE= -10V
COB
Output Capacitance
* Pulse Test: PW≤300μs, Duty Cycle≤1.5%
Switching Times; Resistive Load
ton
Tur-on Time
ts
Storage Time
tf
Fall Time
VCB=-10V;f=1.0MHz
IC= -1A; VCC= 30V;
IB1= IB2= -0.1A
MIN TYP MAX UNIT
-6
V
-60
V
-60
V
-50
mV
-0.3
V
-0.4
V
-0.6
V
-1.2
V
-100 nA
-100 nA
200
400
85
20
150
MHZ
60
pF
80
ns
600
ns
70
ns
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