STD2805 Datasheet, PDF (1/3 Pages) STMicroelectronics – Low voltage fast-switching PNP power transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
STD2805
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.6V(Max)( IC= -5A; IB= -0.25A)
·DC Current Gain -hFE = 85(Min)@ IC= -5A
·Fast -Switching speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·CCFL dirvers
·Voltage regulators
·Relay dirvers
·High efficiency low voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
IB
Base Current
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-10
A
-2
A
15
W
150
℃
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBO
L
PARAMETER
MAX
Rth j-c Thermal Resistance, Junction to Case
8.33
℃
UNIT
℃/W
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