STD1802 Datasheet, PDF (2/2 Pages) STMicroelectronics – LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
STD1802
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE=0.1mA,IC=0
V (BR)CEO) Collector-Emitter Breakdown Voltage IC=1mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage
IC=0.1mA ,IE=0
VCE(sat) * Collector-Emitter Saturation Voltage
VBE(sat)*
ICBO
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 2A; IB= 100mA
IC= 3A; IB= 150mA
IC= 2A; IB= 100mA
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
hFE*
DC Current Gain
IC= 100mA; VCE= 2V
IC= 3A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= 50mA ;VCE= 10V
COB
Output Capacitance
* Pulse Test: PW≤300μs, Duty Cycle≤1.5%
Switching Times; Resistive Load
ton
Tur-on Time
ts
Storage Time
tf
Fall Time
VCB=10V;f=1.0MHz
IC= 1A; VCC= 30V;
IB1= IB2= -0.1A
MIN TYP MAX UNIT
6
V
60
V
80
V
0.3
V
0.4
V
1.2
V
100
nA
100
nA
200
400
100
150
MHZ
50
pF
50
ns
1.35
us
120
ns
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